 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HVV1214-025 HVV1214-025 L-Band Radar L-Band Radar Pulsed Power Transistor HVV1214-075 Pulsed Power Transistor 1200-1400 HVV1214-025 MHz, 200!s Pulse, 10% Duty The innovative Semiconductor Company! Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty L-Band Radar HVV1214-025 L-Band RadarMHz, 200s Pulse, 10% Duty 1200-1400 Pulsed Power Transistor L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty HVV1214-025 PRODUCT OVERVIEW 1200-1400 MHz, 200!s Pulse, 10% Duty L-Band Radar Pulsed Power Transistor PACKAGE PACKAGE 1200-1400 MHz, 200s Pulse, 10% Duty DESCRIPTION Radar Applications DESCRIPTION HVV1214-025 device is for Ground Based PACKAGE The high power a high DESCRIPTION DESCRIPTION TM The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! The innovative Semiconductor Company! * Excellent Ruggedness * Excellent Ruggedness * 48V Supply Voltage Supply The *high48VSupply Voltage power HVV1214-075 * High Power Gain Voltage device is a high 48V *voltage silicon enhancement mode RF transistor High Power Gain * * High Power Gain Excellent Ruggedness radar applications *designed for Ruggedness Excellent L-Band pulsed RATINGS ABSOLUTE Voltage *48V Supply Voltage frequency range from 48V Excellent the Supply MAXIMUM * *operating over Ruggedness Symbol Parameter Value Unit Symbol Parameter Value Unit * 48V Supply 1.2GHz to 1.4GHz. Voltage VDSS Drain-Source Voltage 105 V VDSS 105 Symbol Drain-Source Voltage RaTINGSV Parameter aBSOLUTE MaXIMUM Value Unit VGS Gate-Source Voltage 10 V VGS Gate-Source Voltage 10 V VDSS Drain-Source Symbol Parameter Current Value2 IDSX Drain FEATURES Current Voltage 105 Unit VA IDSX Drain 2 A VGS Drain-Source Voltage 105 10 Gate-Source ValueV VW Unit VDSS Symbol Parameter Voltage P 22 Power Dissipation 116 PDD Power Current Voltage 8 W IDSX Gate-Source Voltage Drain Dissipation 10 116 to AC 95 V Drain-Source V VGS VDSS High Storage Temperature 105 T -65 Power Temperature -65 TSS2 Storage Gain Voltage 250 to C PD Power Dissipation 2 Gate-Source 10 A W V IDSX VGS Drain Current +200 Excellent Ruggedness +200 2 IDSX TS Power Dissipation Storage Temperature -65 to C Drain Current 2 PD 116 200 W A TJ Junction C Supply TJ1,2 48V JunctionVoltage 200 +200 PD2 Storage Temperature -65 to Power Dissipation 116 C C W Temperature TS Temperature TJ Junction C TS Storage Temperature 200 to -65 C +200 Temperature ABSOLUTE MAXIMUM RATINGS C +200 TJ Junction 200 TJ Junction 200 C Temperature Temperature Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 THERMALCHARACTERISTICS CHARACTERISTICS V THERMAL CHARACTERISTICS THERMaL THERMAL CHaRaCTERISTICS V VGS Gate-Source Voltage 10 Parameter ISymbol Drain Current 8 Max A Unit DSX F = 1090 MHz 1300MHz Symbol Parameter Max Unit Symbol Max Unit MismatchPOUT = 75W LMT1 Load 20:1 VSWR Tolerance F = 1090 MHz PD2 1 Power Dissipation WC/W Thermal Resistance 250 1.5 THERMAL CHARACTERISTICS1.5 Tolerance Mismatch Thermal Resistance C/W Thermal Resistance 0.70 C/W JC THERMAL CHARACTERISTICS C F = 1400MHz TS Storage Temperature -65 to RUGGEDNESS Tolerance Symbol Parameter Max+200 Unit ELECTRICALCHARACTERISTICS C CHARACTERISTICS Unit Symbol Junction Parameter Max ELECTRICAL CHaRaCTERISTICS TJELECTRICaL Thermal Resistance 1.5 200 C/W The HVV1214-075 device is capable of ELECTRICAL CHARACTERISTICS C/W Thermal Resistance 1.5 Temperature withstanding an output load mismatch Symbol Parameter Conditions Typ Units Symbol Parameter Conditions corresponding to a 20:1 VSWR over all phase Typ Units ELECTRICAL Parameter CHARACTERISTICS 2mA 102 VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA and rated output110 V Symbol Conditions Typ Units angles power and operating ELECTRICAL CHARACTERISTICS VGS=0V,ID=1mA VBR(DSS) Drain-Source Breakdown 110 V <25 I BR(DSS) Drain Leakage Current VGS=0V,VDS=48V <10 VDSS Drain-Source Breakdown VGS=0V,ID=1mA V !A voltage across the 110 frequency !Aband of IDSS Drain Leakage Current VGS=0V,VDS=48V <10 Symbol ParameterLeakage Current Typ <10 Units !A IGSS Gate Leakage VGS=5V,VDS=0V <1 IDSS VGS=0V,VDS=48V A operation. CHARACTERISTICS Conditions ITHERMAL Drain Leakage Current Gate Current VGS=5V,VDS=0V <1 !A GSS Symbol Drain-Source Breakdown Parameter Conditions Typ V Units VBR(DSS)P1 VGS=0V,ID=1mA 1300MHz 110 <1 G1 Power Gain POUT=25W,F=1200,1400MHz Test Condition AMax 17.5 dB IGSS Gate Leakage Current VGS=5V,VDS=0V Symbol Parameter Units GP 1 1 Power Gain Breakdown POUT=25W,F=1200,1400MHz 17.5 dB VBR(DSS) Drain Input GainCurrent Drain-Source Loss VGS=0V,ID=1mA 110 !A dB V IDSS GP 1 Leakage VGS=0V,VDS=48V1 1300MHz IRL P 8 dB Power Return POUT OUT=25W,F=1200,1400MHz <10 21 Symbol ParameterReturnLoss Max Unit =75W,F=1200MHz,1400MHz POUT =8 LMT Load 75W 20:1 VSWR IRL 1 Input Leakage Current POUT=25W,F=1200,1400MHz dB VGS=0V,VDS=48V Mismatch <10 !A IGSS IDSS Gate DrainResistance Leakage Current 0.70 VGS=5V,VDS=0V 1300MHz Drain Efficiency POUT=25W,F=1200,1400MHz % IRL Input Efficiency POUT=75W,F=1200MHz,1400MHz <1 949 Thermal Return Loss C/W =25W,F=1200,1400MHz F = 1400MHz!A dB JC Drain Leakage Current POUT 49 % 1 IGSS 11 Gate Efficiency VGS=5V,VDS=0V Tolerance <1 !A GP Power GainDroop POUT=25W,F=1200,1400MHz Drain POUT=75W,F=1200MHz,1400MHz 17.544 Pulse POUT=25W,F=1200,1400MHz <0.2 dB %dB 1300MHz PD D1 1 Pulse Droop POUT=25W,F=1200,1400MHz <0.2 dB PD Power Gain P =75W,F=1200MHz,1400MHz 8 17.5 dB IRL1 GP 1 Input Return Loss POUT=25W,F=1200,1400MHz PD 1 Pulse Droop POUTOUT=25W,F=1200,1400MHz <0.6 dB dB IRL Input Return Pulse POUT 1 1.) UnderDrain Efficiency P200!sec, Pulse Duty Cycle = 10% 49 IDQ 48V, IDQ = 15mA =25W,F=1200,1400MHz VDD 48V, 8 % dB Pulse Conditions:Loss Width = OUTPulse=25W,F=1200,1400MHz = at VDD == 15mA Under Pulse Conditions: PulsePulse Width = 200!sec,Duty Cycle =Cycle at 10% at VDD = 48V, IDQ = 15mA ELECTRICAL CHARACTERISTICS 1.) Under Pulse Conditions: Width = 200sec, P =25W,F=1200,1400MHz Pulse Duty 10% = OUT 200sec, Pulse Duty Cycle = VDD = 2.) Rated Pulse Conditions: at T Drain Efficiency = dB % 2 1.) Under Pulse Droop PD1 Rated at TCASE CASE= 25C Pulse Width = POUT=25W,F=1200,1400MHz 10% at <0.249 48V, IDQ = 50mA = 25C25C 2.) Rated at TCASE 1 Pulse 25C Droop POUT=25W,F=1200,1400MHz <0.2 dB PD 2.) Rated at TCASE = Symbol Parameter Conditions Typ Units 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA VBR(DSS) Drain-Source Pulse Width VGS=0V,ID=1mA 110 1.) Under Pulse Conditions:Breakdown = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, V IDQ = 15mA 2.) Rated at TCASE = 25C IDSS Semiconductors, Inc. Drain VGS=0V,VDS=48V <10 A 2.) Rated at TCASE = 25C HVViSemiconductors, Leakage CurrentForadditional information, visit: www.hvvi.com additional information, visit: www.hvvi.com EG-01-PO05X1 HVVi Inc. For EG-01-PO05X1 IGSS S. 51 St. SuiteLeakage Current VGS=5V,VDS=0V Confidential <1 A 10235S. 51ststSt. Gate 100 100 HVViSemiconductors, Inc. Confidential Semiconductors, Inc. 4/29/08 For 10235Semiconductors, Gain Suite HVVi additional information: 4/29/08 EG-01-PO05X5 HVVi GP1 Power Inc. dB EG-01-PO08X1 1 HVVi Semiconductors, Inc. For HVViPOUT=75W,F=1200MHz,1400MHz Phoenix,Az. 85044 Az. 85044 (c)2008 additional information, visit: www.hvvi.com 2008HVVi Semiconductors,visit All Rights Reserved. 21 Semiconductors,Inc. www.hvvi.com Inc. All Rights Reserved. Phoenix, st St. Suite 100 (c) Tel: (866) 429-HVVi (4884) or 10/13/08 1 10235 IRL1 S. 51 POUT=75W,F=1200MHz,1400MHz 9 dB HVVi10235 S. 51st St. Input100 Semiconductors, Inc. Return Loss additional information, visit:Inc. Confidential For EG-01-PO05X1 Suite HVVi Semiconductors, www.hvvi.com 5/23/08 1 Semiconductors, Inc. 1 Phoenix, AZ. 85044 HVVi st St. SuiteDrain Efficiency (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. 44 ForHVVi Semiconductors, Inc. All Rights Reserved. additional information,Confidential visit: www.hvvi.com EG-01-PO05X1 POUT=75W,F=1200MHz,1400MHz % Phoenix, Az. 85044 (c) 2008 Semiconductors, Inc. 10235 S.D 51 100 HVVi 4/29/08 1 10235 S. 51st St. Pulse 100 HVVi POUT=75W,F=1200MHz,1400MHz Semiconductors, Inc. Confidential 4/29/08 PD1 85044 Suite Droop (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. <0.6 dB Phoenix, Az. 1 FEATURES Power Gain DESCRIPTION Gain * High Power High * High Power FEATURES Ruggedness FEaTURES Gain Excellent Pr Phoenix, Az. 85044 eli m (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. in ar The high power HVV1214-025 device is a high DESCRIPTION voltage silicon enhancement mode RF transistor The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed mode RF transistor voltage silicon enhancement radar applications DESCRIPTION designed for L-Band pulsed radar applications operating over the frequency range from designed over the frequency radar from The high powerfor L-Band pulsed rangeaapplications operating HVV1214-025 device is high The highto 1.4GHz. 1.2GHz operating 1.4GHz.the mode device high over voltage siliconpower HVV1214-025 RF transistor from The high to enhancement frequency is ais a high 1.2GHz power HVV1214-025 device range voltage voltage to 1.4GHz. 1.2GHz L-Band pulsed radar applications designed for silicon enhancement mode RF transistor silicon enhancement mode RF transistor designed for designed the frequency range from operating overfor L-Band pulsed radar applications FEATURES L-Band pulsed the applications operating operating over FEATURES 1.2GHz to 1.4GHz.radar frequency range from over the FEATURESfrom 1.2GHz to 1.4GHz. 1.2GHz to 1.4GHz. frequency range L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty The device resides in a Surface Mount The device resides in a Surface Mount Transistor Package with a ceramic lid. The Transistor Package with a ceramic lid. The PACKAGE style is qualified for gross leak SM200 package SM200 package style is qualified for gross leak test - MIL-STD-883, Method 1014. The device MIL-STD-883, Method 1014. test - resides in a Surface Mount The device resides a a Surface Mount Transistor Package with in ceramic lid. The Transistor style is with a ceramic lid. The SM200 packagePackage qualified for gross leak SM200 package test - MIL-STD-883, style is Mount Transistor Package The device resides in a Method qualified for gross leak Surface RUGGEDNESS 1014. The device resides in a two-lead metal flanged test - MIL-STD-883, Method 1014. RUGGEDNESS with a ceramicwith The SM200 package style is qualified package lid. liquid crystal polymer lid. The for gross leakpackage style is qualified for1014. leak HV400 test - MIL-STD-883, Method gross RUGGEDNESS test - MIL-STD-750D, Method 1071.6, Test The HVV1214-025 device is capable of The HVV1214-025 device is capable of RUGGEDNESS Condition C. withstanding an output load mismatch withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase corresponding to 20:1 all phase RUGGEDNESS aoutput VSWR over operating angles and rated power and The HVV1214-025 device is capable and operating RUGGEDNESS angles and rated output power of The HVV1214-025 frequency band of voltage across the withstandingacross the device is capableof voltage an device load mismatch of The HVV1214-025 output frequencymismatch is capableband withstanding an output load of withstanding an operation. corresponding to a 20:1 VSWR over all phase operation. The device is capable of output loadHVV1214-075 20:1 VSWRto a 20:1 VSWR over corresponding to a power and over all phase angles andmismatch corresponding operating rated output withstandingrated output power and mismatch Units load angles andand frequency band of Symbol Parameter output power operating Test Max all phase acrossParameter outputCondition and Max angles the an rated Test Condition operating voltage Symbol 1 corresponding to ain a POUT = 300W of flanged Units 20:1 VSWR over all phase VSWR The device Load resides two-lead metal voltage the frequency band of operation.20:1 LMT 1 operation. across the frequency band voltage across Load output power and operating VSWR LMT 20:1 angles andMismatch POUT = 300W package with liquid crystal polymer lid. The operation. rated Mismatch = 1090 voltagepackage style is F= 1090 MHz gross leak across the F qualifiedMHz band of frequency Tolerance HV400 Symbol Parameter Test Condition for Max Units Tolerance operation. Parameter Test Condition 1 Symbol LMTtest - MIL-STD-750D, 300W Load POUT = Method 1071.6,Max 20:1 Test Units VSWR 1 Condition C. LMT Parameter Load Symbol Mismatch TestPOUT = 300W Condition Max 20:1UnitsVSWR y PACKAGE PACKAGE HVV1214-075 PaCKaGE 1 The innovative Semiconductor Company! HVV1214-025 HVV1214-025 PRODUCT OVERVIEW TM L-Band Radar Pulsed Power Transistor Pulse, 10% Duty 1200-1400 MHz, 200!s 1200-1400 MHz, 200s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor PaCKaGE DIMENSIONS PACKAGE DIMENSIONS DraIN DRAIN GaTE SOURCE The innovative Semiconductor Company! SOUrCE GATE Note: Drawing is not actual size. Note: Drawing is not actual size. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express orFor additional information: under any HVVi intellectual property implied, are conveyed EG-01-PO05X5 HVVi Semiconductors, Inc. rights, includingSuite 100 any patent rights. The HVVi name and logowww.hvvi.com Tel: (866) 429-HVVi (4884) or visit are trademarks of HVVi Semiconductors, 10/13/08 10235 S. 51st St. Inc. (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. 2 Phoenix, AZ. 85044 HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 For additional information, visit: www.hvvi.com HVVi Semiconductors, Inc. Confidential EG-01-PO05X1 4/29/08 |
Price & Availability of HVV1214-025
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |